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| RFG50N05, RFP50N05 Data Sheet July 1999 File Number 2873.3 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET'S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772. Features * 50A, 50V * rDS(ON) = 0.022 * UIS Rating Curve (Single Pulse) * 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N05 RFP50N05 PACKAGE TO-247 TO-220AB BRAND RFG50N05 RFP50N05 G S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-462 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFG50N05, RFP50N05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG50N05, RFP50N05 50 50 50 120 20 132 0.88 Refer to UIS SOA Curve -55 to 175 300 260 UNITS V V A A V W W/ oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 0.250A, VGS = 0V (Figure 9) VDS = VGS, ID = 0.250A (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(tot) Qg(10) Qg(th) RJC RJA TO-220 TO-247 VGS = 0-20V VGS = 0-10V VGS = 0-2V VDD - 40V, ID = 50A RL = 0.8, IG(REF) = 1.5mA (Figure 11) VGS = 20V ID = 50A, VGS = 10V (Figure 7) VDD = 25V, ID 25A, RL = 1.0, RGS = 6.67, VGS = 10V (Figure 11) MIN 50 2.0 TYP 15 55 60 15 MAX 4.0 1 25 100 0.022 100 100 160 80 6 1.14 62 30 UNITS V V A A nA ns ns ns ns ns ns nC nC nC oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current, Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: pulse width 300s duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 50A ISD = 50A, dlSD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns 4-463 RFG50N05, RFP50N05 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 ID, DRAIN CURRENT (A) Unless Otherwise Specified 60 50 40 30 20 10 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 25 50 75 125 100 TC, CASE TEMPERATURE (Co) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC IAS, AVALANCHE CURRENT (A) Tj = MAX RATED TC = 25oC 1000 ID, DRAIN CURRENT (A) If R = 0 tav = (L)(Ias)/(1.3 RATED BVdss - Vdd) If R 0 tav = (L/R) In[(Ias x R)/(1.3 RATED BVdss - Vdd) + 1] Idm 100 Starting Tj = 25oC Starting Tj = 150oC 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 10 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING IDS(ON), DRAIN TO SOURCE CURRENT (A) 120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX o 100 TC = 25 C VGS = 10V 80 60 VGS = 5V VGS = 7V VGS = 8V VGS = 9V VGS = 6V 120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 100 80 60 40 20 -55oC 25oC 175oC ID, DRAIN CURRENT (A) 40 20 VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 0 2.5 5 7.5 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS 4-464 RFG50N05, RFP50N05 Typical Performance Curves 3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5 2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 50A Unless Otherwise Specified (Continued) 2.0 NORMALIZED GATE TO SOURCE THRESHOLD VOLTAGE VGS = VDS ID = 250A 1.8 1.2 1.5 1 0.5 0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200 0.8 0.4 0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 5000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 1.6 C, CAPACITANCE (pF) 4000 1.2 3000 CISS 0.8 2000 COSS 1000 CRSS 0.4 0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200 0 1 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs. JUNCTION TEMPERATURE 50 VDS, DRAIN TO SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 VGS, GATE TO SOURCE VOLTAGE (V) 8 VDD = BVDSS 37.5 VDD = BVDSS 25 RL = 1 IG(REF) = 1.5mA VGS = 10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25 BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 6 4 12.5 2 0 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 4-465 RFG50N05, RFP50N05 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS tON VDS VDS VGS RL + tOFF td(OFF) tr tf 90% td(ON) 90% DUT RGS VGS - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS RL VDD VDS VGS = 20V VGS + Qg(TOT) Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V DUT Ig(REF) FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 4-466 RFG50N05, RFP50N05 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-467 |
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